ABSTRACT
This chapter develops a device model for p-i-n tunneling transit-time diodes based on single- and multiple graphene layer structures operating at the reverse bias voltages. The model of the graphene tunneling transit-time diode (GTUNNETT) accounts for the features of the interband tunneling generation of electrons and holes and their ballistic transport in the device i-section, as well as the effect of the self-consistent electric field associated with the charges of propagating electrons and holes. Due to the effect of the self-consistent electric field, the behavior of the GTUNNETT admittance in the range of its negativity of its real part is rather sensitive to the relation between the number of graphene layers and dielectric constant. The results demonstrate that GTUNNETTs with optimized structure can used in efficient terahertz oscillators. The problems of calculation of the dc and ac characteristics of devices based on lateral structures accounting for the self-consistent electric field are substantially complicated by the features of the structure geometry.
