ABSTRACT
This chapter proposes to utilize multiple-graphene-layer structures with lateral p-i-n junctions for terahertz and infrared photodetection and substantiate the operation of photodetectors based on these structures. It shows that the dc responsivity and detectivity can be fairly large, particularly, at the lower end of the terahertz range at room temperatures. Unique properties of graphene layers (GLs) make them promising for different nanoelectronic device applications. The gapless energy spectrum of GLs, which is an obstacle for creating transistor-based digital circuits, opens up prospects to use GLs in terahertz and infrared (IR) devices. The calculations related to the effect of screening of the vertical electric field on the formation of the electrically induced p- and n-sections in multiple-GL structures are singled out in the Appendix. Due to relatively high quantum efficiency and low thermogeneration rate, the GL photodetectors responsivity and detectivity can substantially exceed those of other photodetectors.
