ABSTRACT
This chapter proposes and analyzes the concept of injection terahertz (THz) lasers based on double-graphene-layer (double-GL) structures utilizing the resonant radiative transitions between GLs. It calculates main characteristics of such double-GL lasers and compares them with the characteristics of the GL lasers with intra-GL interband transitions. The chapter develops a device model for the THz laser exploiting the inter-GL radiative transitions in the double-GL structure with a tunneling barrier layer. Such room temperature lasers might compete with the resonant-tunneling diodes and quantum cascade lasers at the low end of the THz gap. The chapter considers the double GL-structure laser with the lateral injection of electrons and holes into each GL and employing the interband transitions under the conditions of population inversion. The normal operation of the laser under consideration assumes sufficient densities of electrons in GLs. This is achieved by chemical or “electron” doping of GLs and injection of electrons to the upper GL and holes to the lower GL.
