ABSTRACT
This chapter evaluates the effect of the recombination associated with interlayer transitions in ungated and gated double-graphene-layer (GL) structures on the injection of electrons and holes. It develops a model for transport phenomena in the double-GL structures employing the hydrodynamic equations coupled with the Poisson equation for the self-consistent electric potential. The chapter discusses the device model and writes down the main equations, which govern the transport and recombination of the injected electrons in the main parts GLs. It deals with calculations of spatial distributions and voltage dependences of the Fermi energy, the energy gap, and electric potential assuming that the electron-hole scattering dominates over the scattering on disorder. The double-GL structures under consideration are particularly interesting for devices utilizing the resonant tunneling between GLs and resonant tunneling assisted by the photon emission. The stability of the uniform states in the main part of the double-GL structures under consideration when their current-voltage characteristics are of the N-shape was considered recently.
