ABSTRACT
In this chapter, the authors propose and analyze the concept of the vertical hot-electron terahertz graphene-layer detectors (GLD) based on the double- graphene-layer (GL) and multiple-GL structures with the barrier layers made of materials with a moderate conduction band off-set. They evaluate the characteristics of GLDs in the mid- and far-infrared ranges where the electron heating is due to the interband absorption in GLs. The authors discuss the device structures under consideration and the GLD operation principle. They deal with general formulas for the dark current and photocurrent associated with the thermionic emission of electrons from GL and controlled by their capture into GLs. The authors assume that the electron energy relaxation is associated with the processes of the emission and absorption of optical phonons. The main advantages of GLDs are associated with relatively long electron energy relaxation time and the pronounced effect of photoelectric gain at a low capture probability of the electron capture into GLs.
