Electron Capture in van der Waals Graphene-Based Heterostructures with WS2 Barrier Layers *

In this chapter, the authors consider the capture processes of hot electrons propagating across the van der Waals heterostructures with graphene layers (GLs) and WS₂ barrier layers. They also considers a model, in which the GL constitutes a delta-layer sandwiched by the WS₂ barrier layers. The energy spectra of electrons in the GL sandwiched by the WS₂ layers is assumed to be linear. The capture probability of hot electrons into GLs as a function of the electron energy and the electric field as well as the capture probability averaged over the electron energy distribution are calculated accounting for their scattering on the optical phonons and on the electrons localized in GLs. The authors calculate the energy and electric-field dependences of the capture probability W_c and its average value in the van der Waals heterostructures with GLs. The interaction of the hot electrons with the holes in the GLs of p-type provides a similar contribution to the hot-electron capture.