Resonant Plasmonic Terahertz Detection in Vertical Graphene-Base Hot-Electron Transistors *

In this chapter, the authors analyze dynamic properties of vertical graphene-base hot-electron transistors (GB-HET) and consider their operation as detectors of terahertz (THz) radiation using the developed device model. The history of different versions of HETs, including those with the thin metal base and the quantum-well base in which the carriers are generated from impurities or induced by the applied voltages, as well as HETs with resonant-tunneling emitter, is rather long. The authors consider a GB-HET with the highly conducting tunneling emitter and collector of the n-type, the undoped GB, and the barrier layers between the emitter and the GB and between the GB and the collector made of the materials like hBN and WS₂ with a 2DHG induced by the applied bias voltages. By analogy with HETs with the quantum-well-base made of the standard materials, GB-HETs can exhibit resonant response to the incoming signals associated with the excitation of the plasma.