ABSTRACT
In this chapter, the authors study the operation of infrared photodetectors based on van der Waals heterostructures with multiple graphene layers (GL) and n-type emitter and collector contacts. They show that the proper doping of the barrier layers and GLs by acceptors and donors can pronouncedly modify the GL infrared photodetectors (GLIP) characteristics and result in an increase in the GLIP responsivity and detectivity, particularly, in the low-energy part of the infrared spectrum. The authors calculate the GLIP responsivity and dark current detectivity as functions of the energy of incident infrared photons and the structural parameters. The GL doping by acceptors also modifies the responsivity spectral dependence: its increase gives rise to a marked shift of this dependence toward higher photon energies. The comparison of the GLIP characteristics with the characteristics of photodetectors, using similar operation principles, namely with intersubband quantum well infrared photodetectors shows the following advantages of the former:.
