ABSTRACT
In this chapter, the authors propose to use the effect of the real-space-transfer in the gated graphene-phosphorene (G-P) hybrid sandwich-like structures, i.e., in the G-P-channel field-effect transistors and evaluate the characteristics of such devices. They analyze the nonlinear carrier transport in the gated graphene-phosphorene hybrid structures—the G-P field-effect transistors using a phenomenological model. The authors demonstrate that a strong electric-field dependence of the G-P-channel conductivity and substantially nonl inear current-voltage characteristics, exhibiting a negative differential conductivity, are associated with the carrier heating and the real-space carrier transfer between the G- and P-layers. At the gate voltages corresponding to the states close to the Dirac point, the mutual scattering of the electrons and holes in the G-layer can affect the conductivity of the latter. If the electrons and holes effectively interact with the optical phonons of several types, say, with the G-layer optical phonons and the substrate optical phonons.
