Analytical Device Model for Graphene Bilayer Field-Effect Transistors Using Weak Nonlocality Approximation *

This chapter develops an analytical device model for graphene bilayer field-effect transistors (GBL-FETs) with the back and top gates. The model is based on the Boltzmann equation for the electron transport and the Poisson equation in the weak nonlocality approximation for the potential in the GBL-FET channel. The interplay of the short-gate effect and the electron collisions results in a nonmonotonic dependence of the transconductance on the top-gate length. The unique properties of graphene layers, graphene nanoribbon arrays, and graphene bilayers along with graphene nanomeshs make them promising for different nanoelectronic device applications. The reinstatement of the energy gap in graphene-based structures like graphene nanoribbons, graphene nanomeshs, and graphene bilayers appears to be unavoidable to fabricate FETs with a sufficiently large on/off ratio. The interaction of electrons with optical phonons, particularly with optical phonons in the substrate, can be effective in the gate-drain section at elevated drain voltages.