ABSTRACT
This chapter proposes a hydrodynamic model describing steady-state and dynamic electron and hole transport properties of graphene structures which accounts for the features of the electron and hole spectra. It intends for electron-hole plasma in graphene characterized by high rate of inter-carrier scattering compared to external scattering for intrinsic or optically pumped and gated grapheme. The chapter demonstrates that the effect of strong interaction of electrons and holes on their transport can be treated as a viscous friction between the electron and hole components. The hydrodynamic approach is reasonable for the description of dense electron-hole plasma in semiconductor systems in the electron-electron, electron-hole, and hole-hole collisions dominate over the collisions of electrons and holes with disorder. The chapter shows that two types of weakly damping excitations can exist in the electron-hole plasma: electron plasma waves in gated graphene in the state with the Fermi level far from the Dirac point and quasi-neutral electron-hole sound waves in the bipolar electron-hole plasma.
