ABSTRACT
Hall effect characterization is a widely used technique in which the carrier concentration and carrier type can be determined from a Hall voltage caused by the orthogonal application of an electric current and a magnetic field. Hall effect measurement is a standard method for characterizing planar semiconductors, but to perform this type of measurement at the nanoscale requires advanced device fabrication and additional considerations to interpret the measurements. Nonetheless, Hall effect is one of the most powerful tools to characterize nanowires. This chapter reviews the progress of nanowire Hall effect characterization and gives a tutorial style guide to sample fabrication and interpretation of measurements.
