ABSTRACT
Raman scattering is a powerful nondestructive technique used to characterize semiconductor and semiconductor nanostructures. This chapter focuses on technological important materials either with the zinc blende or wurtzite structures. In the book of D. A. Neamen, there is an extended description of metal-semiconductor and semiconductor-semiconductor junctions. Raman scattering or inelastic light scattering consists of the emission of light after being scattered by optical phonons in ordinary semiconductors. Some of the optical properties are better observed in emission, like exciton to bound impurity in semiconductors. In magnetic materials or metals, there are other kinds of excitations that scatter the light inelastically, but in semiconductors or semiconductor nanostructures, one usually refers to the light scattering by phonons. In the case of long wavelength optical modes, the perturbation on the crystal potential is separable into two parts, a short-range component and a long-range component. Different matrices correspond to the different symmetry properties of the crystal.
