ABSTRACT
This chapter reviews the journey of Gallium nitride (GaN) nanoflower (NF) from epitaxial growth to highly efficient optoelectronic devices. It focuses on the photodetection prospect of GaN NFs, which elucidate a brief understanding about the performance parameters and self-driven operation of fabricated ultraviolet (UV) photodetectors (PDs). The optical properties of GaN NFs were explored using photoluminescence spectroscopy. The electronic behavior of GaN NF-based device under UV light conditions needs to be explored to realize a highly efficient PD. The chapter argues that the operation of nanostructured GaN-based devices can be highly responsive at low optical power signals. Thus, the GaN NF-based fabricated device exhibit an effective photodetection aspect. For examining the state of residual stress, the GaN NF was probed by Raman spectroscopy. Growth of GaN NFs appears to ensue through a complex interplay between surface free energy, surface migration, and lattice strain.
