ABSTRACT
This chapter presents the comparative analysis of Tunnel FETs (TFETs), FinFETs, Carbon Nanotube FETs (CNTFETs), Nanowire FETs (NWFETs), and Memristor five novel semiconductor devices, in terms of their physical structure, conduction mechanism, and static performance parameters. All the presented devices are leading research areas in the regime of advance semiconductor devices and manifest potential applications in the designing and growth of the recent ICs. The major advantages of these devices, including reduced leakage current, enhanced sub-threshold slope, low Drain Induced Barrier Lowering (DIBL), high ON current, compact structure, put them in the emerging platform of semiconductor technology. The tunnel FET avoids thermionic emission and incorporates tunneling phenomena to limit the off current, FinFETs provide better electrical control over the channel than the conventional MOSFETs and render less leakage, whereas CNTFETs use CNT material and give high ON current and overcome the limitations of conventional MOSFETs.
