ABSTRACT
This chapter discusses the deposition of Bi2Te3 and Sb2Te3 thin films by thermal coevaporation and describes thermoelectric Bismuth, antimony, and tellurium compounds films, in a planar device structure. The deposition of thermoelectric films was reported before using techniques like electrochemical deposition, metal–organic chemical vapor deposition, pulsed laser deposition, sputtering, and thermal evaporation. Using coevaporation, the deposition rate of each element is controlled independently, and an optimal composition can be achieved. A large volume is required in the boat to maintain deposition properties along the evaporation process, mainly if thick films are pretended. The baffled boxes are used for better stability of deposition rate, compared with typical boats. The structure of films can be controlled by the substrate temperature during deposition or with postdeposition annealing under controlled atmosphere. A rotating substrate reduces thickness and composition nonuniformity of the films. The chemical composition of the films and its structure were studied by energy-dispersive x-ray spectroscopy.
