ABSTRACT
This chapter will cover the detailed analysis under the operating bias of metal oxide semiconductor (MOS) transistor used in the very-large-scale integration (VLSI) technology. In order to get familiar with MOS technology, we will begin with the basic structure and characteristics followed by the scaling of metal oxide semiconductor field-effect transistor (MOSFET). Further, the change in the device characterization due to hot carrier and short-channel effects will be discussed. Moreover, the effect of device capacitance and circuit modeling will be explored before starting the MOSFET DC and dynamic modeling. In addition to that, the industry-standard SPICE model is demonstrated such that the different circuit-level modeling can be understood by the readers working in the field of VLSI technology. Furthermore, some examples related to basic approaches can be obtained using HSPICE simulation tool.
