ABSTRACT
The basic theories, preparation technologies, and performance analysis of the mainstream nitride semiconductor electronic devices, that is, high electron mobility transistors (HEMTs) and materials, have been covered in this book. Further development of nitride HEMT materials and devices deserves much attention. The definite goals of future nitride-based devices are apparently further performance improvement and cost reduction, as well as wider applications. For microwave power amplifier applications, the operating frequency range, bandwidth, and microwave output power with power-added efficiency of nitride HEMTs should be further improved. For power electronic applications, a higher breakdown voltage and output power of the normally on devices, along with the realization of high-performance normally off devices, is also an important target of future nitride HEMTs.
