ABSTRACT
C. Also assume that subthreshold slopes are 80 and 100 mV/decade at 30
°
C and 100
°
C, respectively,
V
scales by 15% per generation, and
I
increases by 5 times each technology generation. Because
I
increases exponentially with temperature, it is important to consider leakage currents and leakage power as a function of temperature. Figure 16.1 shows projected
I
(as a function of temperature) for the four different technologies. Next, we use these projected
I
values to estimate the active leakage power of a 15 mm die (small die), and compare the leakage power with the active power. The total transistor width on the die increases by ~50% each technology generation; hence the total leakage current increases by ~7.5 times. This results in leakage power of the chip increasing by ~5 times each technology generation. Since the active power remains constant (per scaling theory) for constant die size, the leakage power will become a significant portion of the total power as shown in Fig. 16.2.
