ABSTRACT
Kroemer, Herbert (Weimar, Germany, August 25, 1928 - ). A theoretical physicist, but also much involved in applications, Kroemer's doctoral essay, submitted to the
University of Göttingen in 1952 already concerned the behavior of hot electrons in semiconductors. After several affiliations at German laboratories, Herbert Kroemer joined the Electronic and Engineering laboratories of the University of California Santa Barbara (California) in 1976. He then persuaded those responsible for this centre to develop materials other than silicon for the manufacture of high performance semiconductor devices, which he had already demonstrated in 1957. The epitaxic growth of GaP, GaAs, InAs, GaSb, AlSb structures on silicon supports would lead to spectacular progress in information technology and other means of fast communication. The principal contributions of Kroemer concern the theoretical and practical aspects connected with the association of superconductors: semiconductors structures and the transport of current in semiconductor super-networks in high
Herbert Kroemer
electric fields. The miniaturisation of devices permits, in particular, frequencies in the terahertz regime to be reached. In addition to receiving the Nobel Prize, Kroemer has been honoured by German, American and Swedish academies and universities.
