Emission in Wide Band Gap II-VI Semiconductor Compounds with Low Dimensional Structure

Usually the ZnSe-based LD uses a single quantum well or multiple quantum wells as an active layer. It is possible to improve the properties of the LD and other devices, if an asymmetric double quantum wells (ADQWs) structure or a layer with quantum dots is used as an active layer for the LD and other devices. In this paper, our two research works is reported: the first, spontaneous and stimulated emission in ZnCdSe/ZnSe ADQWs; the second, the formation process of CdSe self-assembed quantum dots (SAQDs).