ABSTRACT
This chapter focuses on the layer number characterization of few-layer phosphorene with phase-shifting interferometry method, and temperature/angle-dependent Raman spectroscopy and layer-dependent photo-luminescence (PL) measurements of few-layer phosphorene. Phosphorene is developed two-dimensional (2D) material that has attracted tremendous attention owing to its unique anisotropic manner, layer-dependent direct bandgaps, and quasi-one-dimensional excitonic nature, which are all in drastic contrast with the properties of other 2D materials, such as grapheme and transition metal dichalcogenide semiconductors. Temperature-dependent Raman study for few-layer phosphorene is important to further understand the fine structure and properties of the material, such as atomic bonds, thermal expansion, and thermal conductivity. Compared with other 2D materials, phosphorene shows strong anisotropic properties, allowing for various unique applications in opto-electronics. The emission peak of the PL spectrum for monolayer phosphorene is at 711 nm, corresponding to a peak energy of 1.75 eV. This PL peak energy value was measured at -10°C, and it is expected not to vary too much at room temperature.
