Optical Properties and Electronic Structure of Wide Band Gap II-VI Semiconductors

1

Introduction

2

Cubic and Hexagonal Structures

 2.1

Binary Compounds

 2.2

Ternary Alloys

 2.3

Quaternary Alloys

  2.3.1

Prediction of the Lattice Constant of a Binary Compound

3

The Electronic Band Structure

 3.1

Atomic Orbitals and Band Structure

4

The Band Gap

 4.1

Methods Employed for Determination of the Band Gap

  4.1.1

Band Edge Absorption Spectroscopy

  4.1.2

Excitonic Absorption

  4.1.3

Photoluminescence Spectroscopy

  4.1.4

Photoreflectance Spectroscopy

 4.2

Temperature Dependence of the Band Gap

 4.3

Band Gap Values of Binary Zinc Blende II-VI Semiconductors

 4.4

Band Gap Values of Binary Wurzite II-VI Semiconductors

 4.5

Reference Values for the Band Gap of II-VI Wide Band Gap Semiconductors

 4.6

Band Gap Modification by Strain

  4.6.1

Strain Due to Lattice Mismatch and Differential Thermal Expansion

  4.6.2

Modification of the Electronic Band Structure by Strain

5

Band Gap of Semiconductor Alloys

 5.1

Band Gap and Bowing Parameter of Ternary Alloys

 5.2

Band Gap of Quaternary Alloys

  5.2.1

E_g (x,y) of A_1−xB_xC_1−yD_y Alloys

  5.2.2

E_g (x,y) of A_1−x−yB_xE_yC Alloys

6

Photoluminescence Properties

 6.1

Band-to-Band Transitions

 6.2

Free Exciton Emission

 6.3

Bound Exciton Emission

 6.4

Free-to-Bound Emission

 6.5

Shallow Donor-Acceptor Pair (DAP) Emission

 6.6

Deep-Level Emission

  6.6.1

Cu-Related Bands

  6.6.2

Self-Activated Band

  6.6.3

Emission Due to Structural Defects

7

Summary

Acknowledgments

References