ABSTRACT
The level set method was devised in 1987 by S. Osher and J.A. Sethian [OSe] as a versatile and useful tool for analyzing the motion of fronts. It has proven to be phenomenally successful as both a theoretical and computational device.
In this paper we review its properties, discuss the advances in level set technology since the original paper, highlight some of the application areas, and present a new application to the modeling of epitaxial growth of thin film semiconductor devices (see also [Ca, Me, CGMORVZ]).
