ABSTRACT
The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ
TABLE OF CONTENTS
section Section 1|1 pages
Introduction
section Section 2|1 pages
Deposition Techniques
section Section 3|1 pages
Characterization
chapter Chapter 3.3|34 pages
Band alignment at the interfaces of Si and metals with high-permittivity insulating oxides
chapter Chapter 3.4|40 pages
Electrical characterization, modelling and simulation of MOS structures with high-κ gate stacks
section Section 4|1 pages
Theory
chapter Chapter 4.1|32 pages
Defects and defect-controlled behaviour in high-κ materials: a theoretical perspective
chapter Chapter 4.3|25 pages
Electronic structure and band offsets of high-dielectric-constant gate oxides
chapter Chapter 4.5|36 pages
Ab initio calculations of the structural, electronic and dynamical properties of high-κ dielectrics
chapter Chapter 4.6|30 pages
Defect generation under electrical stress: experimental characterization and modelling
section Section 5|1 pages
Technological Aspects
