ABSTRACT
This chapter describes the reliable p and n doping have been obtained with solution-grown Zinc Oxide (ZnO), which is essential for any light-emitting diode device. Compared to n-type doping, p-type doping poses a much more difficult task because of the high densities of intrinsic defects, low solubility of p-type dopant species and tendencies of dopants to form deep level instead of shallow level acceptor states. Although progress has been made in the growth of ZnO in aqueous solution, much more needs to be done to understand growth and defect mechanisms. Growth of ZnO in aqueous solution is not new. It has been practiced since the early 1960s when ZnO single crystals were hydrothermally grown at high temperatures. Interest in growth of nanostructures and epitaxial thin films began in the 1990s based on the possible emerging applications such as in optoelectronics, radiation hard electronic devices, visible blind devices, semiconductor spintronics, and transparent conducting oxide.
