ABSTRACT
This chapter focuses on the preparation of p-type nitrogen-doped Zinc Oxide (ZnO) films and the related doping mechanism investigation by synchrotron radiation–based methods, such as x-ray absorption spectroscopy and photoelectron spectroscopy. It explores the research status and to give a general statement for the synchrotron radiation and related studies of nitrogen-doped ZnO films. ZnO materials have attracted considerable attention worldwide for its optoelectronic devices and other applications due to its wide band gap of 3.37 eV and large exciton binding energy of 60 meV at room temperature. Comparing with the physical methods, the chemical routes for nitrogen-doped ZnO film fabrication show lots of advantages such as facile and low cost. The nitrogen doping process for ZnO materials can also be operated by some post-growth treatments such as post-annealing under nitrogen-containing atmosphere or direct nitrogen ion-implantation. For effective nitrogen doping, it is essential to substitute oxygen by nitrogen atom in ZnO host lattice.
