ABSTRACT
Metal-semiconductor field-effect transistors (MESFET) are commonly known from Gallium Arsenide (GaAs) technology and are widely used for high-speed logic circuits due to their high channel mobility. In transparent electronics, the established technology of MISFET is used. The contacts degrade, due to the annealing step included in the socketing process, yielding lower effective barrier heights. The electrical characteristics of the transparent MESFET are similar to their opaque analogues. The photocarrier generation inducing this effect may originate from interface-states at the gate-electrode or the source–drain electrodes and or absorption of the source–drain or gate electrode material or the channel material. Thin-film-transistor (TFT) technology is nowadays mostly based on hydrogenated amorphous silicon. The sample annealing causes a reduction of trap state density, a local atomic rearrangement and an improvement of film compactness. In conclusion the electrical properties of low-temperature processed Schottky-gated TFT with amorphous channel material were investigated. The well-known concept of MESFET has been introduced to zinc oxide-based electronics.
