- Heteroepitaxy of ZnO on SiC as a Route toward Nanoscale p–n Junction

ZnO has become interesting as a semiconductor material for device fabrication during the last decade. Due to its direct wide band gap (3.37 eV at RT), high exciton binding energy (60 meV at RT), and optical transparency for visible light, ZnO is a prospective material for micro-, opto-, and transparent electronics [1-6].