ABSTRACT

This chapter discusses the synthesis and properties of Ga1-xMnxP grown by II-pulsed-laser melting. The ability to simultaneously manipulate the electronic and magnetic functionalities in a single device is essential to the development of spin-based electronics or spintronics. The combination of ion implantation and pulsed-laser melting is an alternative process that can be used to incorporate dopants well in excess of their equilibrium solubility. Ion beam analysis demonstrates that annealing at successively higher temperatures results in the relocation of a larger fraction of MnGa moments to sites incommensurate with the lattice, which is consistent with the lowering of TC. The instability of the Mnca defect at temperatures greater than 300°C indicates that ferromagnetism in Mn-doped GaP in materials exposed to extended thermal treatment above this temperature is unlikely to originate from the dilute alloy, hole-mediated ferromagnetic phase.