ABSTRACT
Thin films of nanocrystalline silicon (nc-Si) are very promising as elements of the solar cells (Shan et al, 2000; Cheng et al, 2004), thin-film transistors (Lee, 2005), gas sensors and devices using the one-electron recharge processes (single electronic devices) (Tiwari, 1996). In the case of solar cells, these prospects are determined by the fact that the fundamental absorption edge of these films can be shifted to photons with energies less than 1 eV, which is not absorbed by monocrystalline silicon (c-Si). In addition, in these films there is no light degradation (Staebler-Wronski effect), observed in films of amorphous hydrogenated silicon (a-Si:H). Applied to thin-film transistors the nc-Si films exhibit high charge carrier mobility and high electrical stability (Lee, 2005; Tiwari, 1996).
