GaInAsP–InP System: MOCVD Growth, Characterization, and Applications |

ABSTRACT

P = 0.3 mb

7 × 10−3 mbar

re

) lattice-match wth pressure i

)InP GaInAsP /a− remaining gro

μm, wall Ga

P1−y trate an rtial orus the wth d in

ar.

.

ed s 76

Inpa wth

paramete layers w (which is

Fig. 13.2 keep

F

Fig.