ABSTRACT
The
i,
rties s as .2).
The Fig. 15.3 crystallin
15.3 For the g heating f on the si the prop temperat
The InP has the dark results, i photolum substrate profile. T which is mismatch in the lay neutral a Extrinsic excitons understo
Fig. 15.4
GaAs epilaye shows the d ity of the GaA
. InP grow rowth of InP
or the Si subs licon substrate agation of m ure of 550 °C. electrochemica a low n-type r (dotted curve ndicating that inescence spe
is shown in he intrinsic ( 13 meV lower existing betw er. The peaks cceptor recom recombinatio appear betwe
od.
