ABSTRACT
The evolution of sheet resistivity as a function of post-implant annealing temperature for p-type InP is shown in figure 1. It is observed that the initially p-type layers convert to n-type conductivity for all as-implanted samples. The initial sheet resistivity of the Zn-doped InP layer before implant isolation is 872 0/D. After iron implantation, the sheet resistivity for 77K and RT implants is -6x106 0/D and that for 100°C and 200°C implants is -106 0/D. Thus there is an increase in Rs by at least three orders of magnitude for all samples. Maximum sheet resistivities of 2.7x107 0/D and 1.5x107 0/D are obtained after a post-implant annealing temperature of 500°C for 77K and RT implants respectively.
