ABSTRACT
Fig. 2. Dark-field (002) plan-view TEM images of structure B with a CdSe white spots surrounded by four-leaf dark strain field . The relief between dots is artefact due to ion milling.
the islands as high as 85-90% [8]. It is approximately twice higher than that obtained in the samples grown earlier by MEE technique with a Cd pulse duration exceeding a 0.5ML surface coverage [2], which may be explained by large enough space for Cd surface migration, twice larger total time of CdSe redistribution between pulses and elimination of the parasitic influence on the intrinsic CdSe QD self-formation process of excessive (>O.SML) Cd accumulation at growth surface imperfections [7].
