ABSTRACT
Abstract. In this report, we present the preparation of specific Si/SiGe MOSFET device structures for TEM analysis, using a new JEOL dual column focussed ion beam (FIB) miller. HREM/STEM imaging has verified the gate oxide thickness and the uniformity of the gate electrode structure. Misfit dislocation bands were observed within the virtual substrate, which found to be associated with steps in the Ge concentration profile.
