ABSTRACT
The MOCVD growth of semiconductor III-V or II-VI compounds is achieved by introducing source materials and the radicals into a reactor chamber, which can be either a quartz tube or a stainless steel chamber, that contains a substrate placed on a heated susceptor. The hot susceptor has a catalytic effect on the decomposition of the gaseous products and growth therefore takes place primarily at this hot surface. A simplified schematic diagram of an MOCVD system is shown in figure 2.1.
