256Kb Ferroelectric Nonvolatiele Memory Technology for IT/IC Cell with 100ms Read/Write Time at 3V

A 3V 100ns read/write 256kb ferroelectric nonvolatile memory (FeRAM) is achieved with 1T/1C cells, novel reference cell circuits and cell plate circuits. The FeRAM is fabricated in 1.2um CMOS process with single Aluminum interconnection and Bi based layered perovskite ferroelectric material 'Y-l" and has no fatigue even after 1012 destructive read and re-write stress cycles.