The implementation of perovskite materials in high density memories is near. In addition, the pyroelectric and piezoelectric properties of these materials make them attractive candidates for use in a wide array of solid state sensors and imaging devices. Increasing levels of integration have resulted in increasing interest in chemical vapor deposition (CVD) primarily because it offers the ability to conformally coat small features with challenging aspect ratios. For example, several groups have demonstrated that sputtered BaSrTi03 (BST) films do not have sufficient step coverage to be used alone in high density DRAMs.12 Consequently, significant effort is being directed at the development of CVD processes for a variety of
ferroelectric thin films;3,4,$6,7,8 biit progress has been slow. In general, many CVD processes exhibit poor thickness and composition precision arising from the use of solid and low vapor pressure liquid source reagents which are difficult to deliver by conventional methods, principally involving bubblers which employ evaporation or sublimation.