Conformal Lsmcd Depositon of SrBi[sub(2)] (Tai_xNb[sub(*)])[sub(2)]O[sub(9)]

Abstract This paper presents new results of Liquid Source Misted Chemical Deposition (LSMCD) of SrBi2(Tai-xNbx)20 9 thin films showing good step coverage of 150 nm thick films into square openings approximately 1 pm deep by 0.6 pm wide. A SAMCO model HDF-6000 LSMCD machine was used for the ferroelectric deposition. Prior to the deposition of the ferroelectric film, a Pt bottom electrode of approximately 2 0 0 nm thickness was sputtered into an initial opening 1 pm deep by 1 pm wide. The LSMCD and new chemistry methodologies by which these results were obtained will be described in this paper. The electrical characteristics of the LSMCD films will also be reported. LSMCD films resulted in higher switched charge (2Pr) than the spin-on films. The coercive fields (2EC) and maximum leakage currents were comparable for the two deposition methods. These results show that conformal LSMCD thin films can be used for sub-micron circuits containing ferroelectric memory.