ABSTRACT
STEVEN M. BILODEAU, STEPHEN T. JOHNSTON, MICHAEL W. RUSSELL, DANIEL J. VESTYCK and PETER C. VAN BUSKIRK
Emosyn, ATM I Inc., 7 Commerce Drive, Danbury, CT 06810
INTRODUCTION
The promise of ferroelectric materials such as PZT and SBT for non
volatile memory ICs is well known. For ferroelectric memories to
proliferate, the technology needs to adopt voltage and feature size
scaling trends that are the defining trait of the semiconductor industry.
