ABSTRACT
Divisions, Argonne, IL 60439, cUniversity of Maryland, Materials and Nuclear Engineering, College Park, MD 20742; and d University of North Carolina,
Department of Chemistry, Chapel Hill, NC 27599
INTRODUCTION
Ferroelectric and high dielectric constant (k) thin films, relevant to non-volatile ferroelectric random access memories (NVFRAMs) and high (k) dynamic random access memories (DRAMs), respectively, will be very thin (< 100 nm) for the next generation of high density, low voltage devices. In addition, as the heterostructure ferroelectric capacitors needed for these memories and processing conditions become increasingly more complex, there is a growing need for in situ, real-time, surface-specific analytical tools to characterize phenomena occurring at the surface of the growing films and heterostructure interfaces. These analytical tools must not be destructive, should provide a wide range of surface compositional and structural information on a time scale commensurate with the deposition rate, and must be compatible with the geometric constraints of the deposition process and the temperatures and ambient gas pressures required by the thin film growth environment.
