ABSTRACT
InP-based heterojunction bipolar transistors (HBTs) have demon-
strated superior high-frequency performance over their SiGe and
GaAs counterparts. The rapid development of metamorphic buffer
growth technology allows the fabrication of InP-based HBTs on
GaAs or Si substrates with lower substrate and fabrication costs.
Metamorphic HBTs (MHBTs) — growing InP-based HBTs on GaAs
substrates have made substantial progresses in the last decade. In
this chapter, the developments of the MHBT technologies, including
device epitaxial structures, processing technologies, and the state-
of-the-art microwave and millimeter-wave performance, will be
reviewed. Some of the critical issues such as thermal resistance and
device reliability will be discussed.
