ABSTRACT
T. TANAKA,*'1 M. YOSHIDA,2 M. SHINOHARA,1 S. WATANABE1 and T. TAKAGI1 1Department of Electronics and Photonic Systems Engineering, Hiroshima Institute of Technology, 2-1-1, Miyake, Saeki-ku, Hiroshima 731-5193, Japan 2Mitsubishi Heavy Industry, Limited, Hiroshima Research Center, 6-22, 4-Chome, Kan-On-Shin-Machi, Nishi-ku, Hiroshima 733-8553, Japan
1. INTRODUCTION
Plasma source ion implantation (PSII) is a rapidly advancing technique that is highly suitable for the surface treatment of three-dimensional workpieces [1-3]. Many plasma sources have been employed to produce ions for implantation, including filament discharge, rf discharge, microwave discharge and metal arc discharge. PSII using an external pulsed inductively coupled plasma (ICP) source has been shown to be an effective method for modifying the surface characteristics of poly(ethylene terephthalate) (PET) films and forming amorphous carbon layers on PET films and bottles [4], This method also enables the modification of
the crystal structure of thin carbon layers and mixing layers [5]. However, the ion implantation dose applied to the surface of a three-dimensional target is not uniform because the technique is inherently anisotropic. Therefore, surfaces at a distance or at an angle to the plasma source will be non-uniformly treated.
