Introduction is work is a part of our project on electron impact ionization on technological molecules in low-energy regimes. Our aim is to determine the dierential and integral cross sections corresponding to the production of molecular and atomic cations in electron impact ionization of the SiH4 molecule, which is widely used in plasma deposition of silicon containing thin lms. Electron ionization cross sections of SiH4 are needed for the modeling of charge carrier balance in plasma and gas phase media [1, 2]. ere is dearth to elucidate the atomic and molecular properties and their interaction with photons and electrons. Photoabsorption and photoionization studies of silane and its radicals have already been made by Gallagher et al. , Johnson III et al. , and Cooper et al. [5, 6]. e experimental determination of partial and total electron ionization cross sections includes those of Perrin et al. , Chatham et al. , Krishnakumar and Srivastava , and Basner et al. . Haaland  estimated the partial ionization cross sections for the formation of Si containing radicals by scaling the data of Chatham et al.  and the dierential data of Morrison and Traeger  to his absolute values at 50 eV. From a theoretical standpoint, calculations for SiH4 are particularly challenging. e rigorous quantum mechanical approach for the calculations for molecules is limited to the application of simple molecules. Contrary to it, there now exist the binary encounter Bethe formalism by Ali et al. , the semiempirical formalism by Khare et al. , DM-formalism by Deutsch et al. , and complex potential model calculations by Joshipura et al. [16, 17].