ABSTRACT
Over the last six decades, our daily life has been revolutionized by the invention of solid-state electronic devices. The key factor for this development was the preparation of high-purity semiconductors as well as the ability to control the impurity level, that is, the incorporation of defects on the atomic scale. Currently, nanoelectronic
6.1 Introduction .................................................................................................. 159 6.2 Diffusion in Silicon ...................................................................................... 161
6.2.1 Self-Diffusion ................................................................................... 162 6.2.2 Dopant Diffusion .............................................................................. 169
6.2.2.1 Mechanisms of Boron Diffusion........................................ 172 6.2.2.2 Mechanisms of Phosphorus Diffusion ............................... 173 6.2.2.3 Mechanisms of Arsenic Diffusion ..................................... 175
6.2.3 Comparison between Self-and Dopant Diffusion ............................ 178 6.2.4 Nonequilibrium Diffusion ................................................................ 178
6.3 Diffusion in Germanium .............................................................................. 182 6.3.1 Self-Diffusion ................................................................................... 184 6.3.2 Dopant Diffusion in Germanium ..................................................... 187
6.3.2.1 Donor Diffusion ................................................................. 188 6.3.2.2 Acceptor Diffusion ............................................................ 190 6.3.2.3 Formation of Dopant-Defect Complexes .......................... 192
6.3.3 Nonequilibrium Diffusion ................................................................ 193 6.4 Diffusion in Silicon-Germanium Alloys ..................................................... 197
6.4.1 Self-Diffusion ................................................................................... 197 6.4.2 Dopant Diffusion ..............................................................................202
