ABSTRACT
Understanding and control of point defect complexes are of decisive importance for the present and future use of silicon in electronics and photovoltaics (PV). Intrinsic defects, formed during crystal growth and/or device processing, interact strongly with common residual impurities such as oxygen (O), carbon (C), hydrogen (H), nitrogen (N), transition metals (e.g., Fe), as well as with dopants (e.g., B and P). Most of these complexes are electrically active with deep states in the bandgap, and in order to minimize their adverse effect on device performance, they need to be controlled at concentrations on the order of ~1010 cm−3 (or sometimes even lower).
8.1 Introduction .................................................................................................. 255 8.2 Divacancy (V2) Center .................................................................................. 257
