ABSTRACT
Spectroscopic studies of defects and impurities in silicon have been a key factor in the development of silicon-based electronic devices. Silicon is still the material of choice for microelectronic and photovoltaic applications and the candidate for future applications in optoelectronics. For this reason, it is still the subject of dedicated experimental and theoretical research, in particular for clarifying the role of defects in view of the complete exploitation of its potentialities for the development of advanced technological processes.
