ABSTRACT
Germanium is attracting increasing interest due to the similarity of its band structure to III-V semiconductors, and its compatibility with Si-based microelectronics. High p-type electrical mobility in strained Ge channels has been demonstrated, but recent results also demonstrate the possible optoelectronic applications for both thinstrained Ge quantum wells (QWs) and thick bulk-like Ge layers (Chaisakul et al. 2014b; Rouifed et al. 2014; Camacho-Aguilera et al. 2012).
