ABSTRACT
Self-interstitials and vacancies, the primary intrinsic defects, are invariably present in silicon and germanium crystals. Usually formed thermally, during growth annealing or following oxidation, they can also be introduced in higher concentrations by irradiation with fast electrons, γ-rays, neutrons and heavier particles, deformation, or other damaging treatments. Highly mobile and reactive, the self-interstitial takes part in many defect reactions in a wide temperature range. In silicon, it is a mediator for the diffusion of impurities, and is responsible for the transient enhanced diffusion (TED) of boron during the rst step following impurity implantation,1 as well as for forming compensating defect centers. Thus, knowing the properties of this evasive defect is essential in controlling and understanding the evolution of point and extended defects in electronic and solar cell materials.
